Scope
5.2 Facility & Site Preparation Requirements The contractor shall provide a comprehensive Site Preparation Guide within 15 days of contract award, if required.
DEPT OF DEFENSE · DEFENSE LOGISTICS AGENCY · DCSO-COLUMBUS-DIVISION-2
The Department of Defense seeks a comprehensive, multi-environment resistivity measurement system suite for analyzing semiconductor materials and thin films. The system must offer specific analytical capabilities, including temperature measurement up to +300°C, and provide required documentation upon installation. [3][1]
5.0 Installation and Training 5.1 Installation Requirements Installation shall be conducted on-site at the government facility by a highly trained, OEM-certified Service Engineer.
8.0 Certification and Verification 8.1 The contractor shall provide instrument certification or verification of instrument performance upon completion of installation (IQ/OQ).
Set-aside: No Set aside used
Generated from the public notice and source-backed solicitation passages. Confirm important requirements in the cited brief and official documents.
5.0 Installation and Training 5.1 Installation Requirements Installation shall be conducted on-site at the government facility by a highly trained, OEM-certified Service Engineer.
5.2 Facility & Site Preparation Requirements The contractor shall provide a comprehensive Site Preparation Guide within 15 days of contract award, if required.
8.0 Certification and Verification 8.1 The contractor shall provide instrument certification or verification of instrument performance upon completion of installation (IQ/OQ).
4.2 Required Analytical Capabilities Through flexible programming of the software and instrument, the system must be capable of automatically determining and analyzing the following material properties: • The system must be capable of directly measuring Voltage/Current (V/I) and calculating Sheet Resistance (Ohms/Square) and Volume/Bulk Resistivity (Ohm-cm). • Must accurately analyze a wide spectrum of materials, including highly conductive metal films, soft conductive polymers, very thin films, and high-resistivity silicon (including samples with naturally forming nonconductive oxide layers). • The analytical software must automatically apply thickness correction factors (a) for samples where the thickness (t) is less than or equal to one-half the probe spacing (s), utilizing the standard formula: Rho = 4.53 x (t) x (V/I). • The software must utilize advanced correction algorithms (e.g., Dual Configuration mode) to allow accurate probing near the edge of the sample (to within a proximity of 4 times the probe spacing) maintaining ≤ 1% accuracy. • Utilizing the high-temperature probe heads (HT4) and thermal chuck, the system must be capable of measuring and logging changes in sample resistivity as a function of temperature from ambient up to +300°C. • The system must feature "Autorange" capabilities to automatically step through current settings at the first test site until the measured voltage reaches the ideal target range, thereby preventing damage to delicate thin films and ensuring measurement accuracy. • All analytical results, including raw V/I data, calculated resistivity, applied correction factors, and temperature logs, must be exportable to standard, non-proprietary formats such as CSV.
5-D Philadelphia, PA 19111 7.6 Invoicing All invoices must be submitted through Wide Area Workflow (WAWF).
Set-aside: No Set aside used
Philadelphia, PA, USA
Posted Sep 1, 2026; Responses due Sep 11, 2026, 7:00 PM UTC; Archive date Sep 26, 2026
Extracted from the official notice and archived solicitation files. Confirm controlling requirements in the source documents.
The objective of this acquisition is to provide the Department with a comprehensive, multi-environment resistivity measurement capability. This suite will support mission-critical analysis of semiconductor materials, thin films, and conductive polymers across a full range of physical and thermal conditions. Please see attached Statement of Work (SOW) for more specific technical information.
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